Task 10 Write a programme for plotting the ideal high-frequency capacitance voltage plot.

This task ask us to write a programme to plot the ideal C-V curve. Our group used matlab to obtain the ideal C-V curve. Firstly, we just get the shift voltage in midgap condition and shift the real C-V curve. however, this method is wrong, the shift voltage is changing in different conditions. Therefore, we know that the ideal curve is not just shift by the real C-V curve. After ten days hard working,  we calculate the gate voltage in different regions refer to the file that tutor given. The result would be shown in the figure 1. The specific code would be shown in the report appendix.

Figure 1

Task 9 Compare your results with results of other group

We got the results of other groups from the tutor. These results could be analyzed to this table  

.seen below table 1. 

From the table, we could see that the higher percentages of Hafnium, the higher permittivity we get. Therefore this material HfSiO called high-k material which the perimittivity is high. However, the value in the last column shows that the value of fixed oxide charge, Nf, the absolute value accumulates while percentage of Hf increases. In conclusion, the alteration of Hf percentage provides a higher permittivity in order to prevent the leakage of current. This is a significant reason that we use the high-k material to replace the dioxide silicon.